Electron–Hole Bilayer Systems in Semicondutors: A Theoretical Perspective

Abstract

In this generation of semiconductor-based miniature gadgets, it is always an intriguing issue to understand the underlying mechanism of these highly sophisticated devices. Systematic exploration uncovers the fascinating world of nano-scale physics; however, a deeper probe actually unearths the salient nature of electron-hole interaction which is the soul of semiconductor physics. In this essay, we plan to shed some light on the interplay of different interactions in electron-hole systems. This study is purely theoretical; however, we put forward recent experimental successes at suitable places. Here, we explicate the intricacies involving electron(hole)–electron(hole) and electron-hole interaction in the realm of mean-field theory. To make our description more comprehensive and complete, we elaborate the theoretical analysis by means of both path integral formalism and canonical transformation method. The discussion clearly suggests that the interplay of intra-layer and inter-layer interactions results in the formation of several exotic phases such as Sharma phase and Fulde-Ferrell-Larkin-Ovchinniov (FFLO) phase.