Reconfigurable tunnel field effect transistor exhibiting reduced ambipolar behavior

Abstract

This paper proposes an architecture for tunnel field effect transistor (TFET), which provides the reconfigurable property while controlling the ambipolar behaviour of the device. It is a double gate structure where the gates split and placed near the area where tunnelling occurs. The effect of metal work function variations as well device dimension reduction on current performance is analysed in this work. As per the analysis of the device, symmetrical p-type and n-type behaviour are achieved with the metal having middle band-gap work function. Technology computer-aided design (TCAD) simulations are carried out to examine the device performance.