Analytical modeling of reconfigurable transistors

Abstract

A functionally enhanced transistor is a potential candidate for further advancing electronics and Moore's law beyond the classical scaling. This chapter discusses these kinds of multifunctional transistors called reconfigurable field-effect transistor (RFET) and reconfigurable tunnel field-effect transistor (RTFET). The RFET works on the principle of Schottky barrier tunneling, and the RTFET works on the principle of band-to-band tunneling. Both devices can be configured as an n-type and p-type device based on the biasing. This chapter explains the working and performance comparison of RFET and RTFET in detail with the help of technology computer-aided design (TCAD) simulations. Further, the potential and current models of a single-gated RFET and double-gated RTFET are presented in this chapter. The presented analytical models are compared and verified with TCAD simulations. The potential in the channel regions of RFET and RTFET is modeled by solving a two-dimensional (2D) Poisson's equation. Because the working principle of both devices is different, two different formulas are utilized for modeling the current in the device. The current model for the RFET is developed by integrating Landauer's formula, whereas the current model for RTFET is obtained by integrating band-to-band generation rate over the tunneling volume. The procedure, technique, and assumptions followed to obtain the potential and current models of RFET and RTFET are detailed in this chapter.