An analytical model for a reconfigurable tunnel field effect transistor

Abstract

In this work, an analytical model for surface potential and current through a recon?gurable tunnel ?eld effect transistor (RTFET) are proposed. While obtaining the mathematical potential model, the whole channel region is divided into three: two regions with gate electrodes and a region in between two gates. The 2D Poisson’s equation is solved in the region under the gate by appropriately selecting the boundary conditions. The current model is derived by integrating the band to band generation rate. The analytical models are validated using technology computer-aided design (TCAD) simulation and the analytical model and TCAD simulations are in good agreement